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曾 飞
副研究员

?博士
电话:+86-10-62795373
传真: +86-10-62771160
电子邮箱:zengfei@tsinghua.edu.cn
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  • 教育背景
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  • 学术成果

2002, 工学博士, 乐鱼全站app材料系材料物理与化学专业

1994, 工学硕士, 中科院上海微系统所材料物理专业

1991, 工学学士, 华中科技大学固体电子学系半导体物理与器件

2002-至今, 乐鱼全站app材料学(系)院

1996-1999, 讲师, 中南大学材料系


中国真空学会理事


功能薄膜材料界面效应,存储、记忆与学习效应,材料的掺杂技术与理化性质。


近年主要从事类脑计算材料与器件研究,采用无机、有机的忆阻器(memristor)材料构造人工神经突触和纤维结构,模拟突触的可塑性、研究其产生机理。柔性电子材料与器件,可穿戴设备与材料。


任职以来发表SCI论文超过200篇,SCI他引超过5000次,H因子43;授权国家发明专利26项;获国家自然科学二等奖(第二)、国家技术发明二等奖(第三)、国家科技进步二等奖(第六)各1项,获2009年教育部新世纪人才计划支持。


近期论文(及专利)


1. Wan, Q.; Zeng, F.; Yin, J.; Sun, Y. M.; Hu, Y. D.; Liu, J. L.; Wang, Y. C.; Li, G. Q.; Guo, D.; Pan, F., Phase-change Nano-clusters Embedded Memristor for Simulating Synaptic Learning. Nanoscale 2019, 11, 5684-5692.

2. Yin, J.; Zeng, F.; Wan, Q.; Li, F.; Sun, Y. M.; Hu, Y. D.; Liu, J. L.; Li, G. Q.; Pan, F., Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity. Adv. Funct. Mater. 2018, 28, 1706927.

3. Hu, Y. D.; Zeng, F.; Chang, C. T.; Dong, W. S.; Li, X. J.; Pan, F.; Li, G. Q., Diverse Synaptic Plasticity Induced by Interplay of Ionic Polarization and Doping at Salt-Doped Electrolyte/Semiconducting Polymer Interface. ACS Omega 2017, 2, 746-754.

4. Chang, C. T.; Zeng, F.; Li, J. X.; Dong, W. S.; Hu, Y. D.; Li, G. Q., Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions. RSC Adv. 2017, 7, 4017.

5. Chang, C. T.; Zeng, F.; Li, X. J.; Dong, W. S.; Lu, S. H.; Gao, S.; Pan, F., Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film. Sci. Rep. 2016, 5, 18915.

6. Dong, W. S.; Zeng, F.; Lu, S. H.; Liu, A.; Li, X. J.; Pan, F., Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells. Nanoscale 2015, 7, 16880 - 16889.

7. Tang, G. S.; Zeng, F.; Chen, C.; Liu, H. Y.; Gao, S.; Song, C.; Lin, Y. S.; Chen, G.; Pan, F., Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. Nanoscale 2013, 5, 422-428.

8. Gao, S.; Zeng, F.; Li, F.; Wang, M. J.; Mao, H. J.; Wang, G. Y.; Song, C.; Pan, F., forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale 2015, 7, 6031-6038.

9. Li, S. Z.; Zeng, F.; Chen, C.; Liu, H.; Tang, G. S.; Gao, S.; Song, C.; Lin, Y. S.; Pan, F.; Guo, D., Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system. J. Mater. Chem. C 2013, 1, 5292-5298.

10. Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Pan, F., Resistive switching induced by metallic filaments formation through poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate). ACS Appl. Mater. & Interfaces 2012, 4, 447-453.

11. Zeng, F.; Li, S. Z.; Yang, J.; Pan, F.; Guo, D., Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell. RSC Adv. 2014, 4, 14822.

12. Zeng, F.; Lu, S. H.; Li, S. Z.; Li, X. J.; Pan, F., Frequency Selectivity in Pulse Responses of Pt/Poly(3-Hexylthiophene-2,5-Diyl)/Polyethylene Oxide + Li+/Pt Hetero-Junction. PLoS ONE 2014, 9, e108316.

13. Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Yang, Y. C.; Pan, F., Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)/Al structure. Appl. Phys. Lett. 2010, 97, 253301.

14. Chen, C.; Gao, S.; Zeng, F.; Wang, G. Y.; Li, S. Z.; Song, C.; Pan, F., Conductance quantization in oxygen-anion-migration-based resistive switching memory devices. Appl. Phys. Lett. 2013, 103, 043510.

15. Gao, S.; Zeng, F.; Wang, M. J.; Wang, G. Y.; Song, C.; Pan, F., Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch. Sci. Rep. 2015, 5, 15467.

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